考博考生生准备要参加博士研究生考试时，必须要先确定准备攻读博士的相关专业，然后选择该专业有招生需求的学校，接下来应该联系博士生导师，只有当博士生导师同意考生报考，考博生才可以报考。所以提前了解博士生导师的学术文章及联系方式很重要，新东方在线特整理了各招收博士院校博导的简介及联系方式供考博生参考。

　　姓名：施路平

　　职称：教授

　　联系电话：010 62771685

　　E-mail：lpshi@tsinghua.edu.cn

　　通信地址：北京市海淀区100084清华大学精密仪器系

　　办公地点：清华大学精密仪器系4308房间

　　教育背景

　　1992年: 德国科隆大学结晶学研究所获科学博士学位

　　1988年: 山东大学晶体所获理学硕士学位

　　1981年: 山东大学物理系实验物理专业毕业

　　工作履历

　　2014年9月清华大学类脑计算中心主任

　　2013年3月-光盘国家工程研究中心主任，千人计划特聘教授，清华大学

　　1996年8月-2013年3月新科研数据存储研究院期间历任

　　新加坡新科研，人工认知存储器实验室主任(Program manager of Artificial cognitive memory, A*Star, Singapore);

　　光学材料和系统实验室主任(Division Manager of Optical materials & systems division);

　　非易失性存储器实验室主任(Program manager of Non volatile memory program)

　　光学媒体实验室主任 (Program manager of optical media)

　　资深科学家III， II，I (Senior scientist III， II， I)

　　科学家(Scientist)

　　首席研究工程师 (Principal research engineer II,I)，

　　高级研究工程师，(Senior research engineer)

　　1994年2月-1996年7月：香港城市大学光电子中心博士后研究员

　　1993年1月-1993年12月：德国Frauhofer 应用光学和精密仪器研究所博士后研究员

　　1988年8月-1989年8月：山东大学,国家晶体材料重点实验室,讲师

　　1981年2月-1985年7月：山东大学实验中心助理工程师

　　学术兼职

　　华中科技大学客座教授 (2009-2011)

　　主编a Book Series on Solid state memories，CRC Press and Taylor & Francis

　　编委员会成员，Scientific Reports (Nature Publication Group)

　　社会兼职

　　1.IEEE Non-volatile Solid State Memory Technology Symposium (NVMTS) 2014，2013，2012，2011，联合主席.

　　2.The 9th Asia-Pacific Conference on Near-field Optics (APNFO2013) 联合主席

　　3.美国Optical Data Storage Topic Meeting (ODS)( 2010)顾问委员会主席

　　4.美国ODS(2009) 大会联合主席

　　5.美国ODS 2008 技术委员会联合主席

　　6.APNFO2014 技术委员会委员

　　7.IEEE Non-volatile Solid State Memory Technology Symposium (NVMTS)技术委员会成员, 分会主席，2009，2008，2007

　　8.East-West Summit on Nanophotonics and Metal Materials 2009大会联合主席

　　9.美国ODS 2011-2014顾问委员会成员， 2007 技术委员会成员

　　10.International Symposium on Optical Memory (ISOM) 2007, 当地组委会秘书长 Local Organization Committee Secretary

　　11.International Conference of Materials on Application Technology (ICMAT), Singapore, 2007, 技术委员会成员, 分会主席

　　12.国际存储工业联合体光存储研究发展指南2003，2006下列专家组的专家成员

　　DVD and follow-on technologies group数字化视频光盘及跟踪技术专家组)

　　Signal processing and multilevel storage recording group (信号处理及多级存储)

　　13.SPIE Photonics Asia Conference 2004, 2007,2010，2013 技术委员会成员, 分会主席

　　14.国际顾问委员会成员 Symposium A "Adaptive, Active and Multifunctional Smart Materials Systems" of 4th International Conference on “Smart Materials, Structures and Systems”, 2012，2013

　　研究领域

　　1.类脑计算 (类脑计算系统，类脑计算理论，神经形态学工程及器件)

　　2.智能仪器 (智能信息存储，人工认知存储器)

　　3.半导体非易失性存储器，(相变储存器，阻变存储器，磁存储器)

　　4.光存储 (超高密度光储存系统和媒介，绿色长寿安全命存储)

　　5.光子学 (光子学器件及材料)

　　6.自旋电子学 (相变磁性材料，相变自旋电子学器件物理)

　　7.纳米科学和技术 (纳米超快测量，纳米相变，纳米器件和材料)

　　研究概况

　　在高速相变存储器研究方面处于世界领先的地位。发现相变速度和材料物理尺度和晶畴尺度间的理论关系，物理尺度或晶畴尺度的减小均有利于相变速度的加快。发现了利用电脉冲波形控制结晶速度的方法。这都为提高相变速度提供了新的途径。并首先实现了迄今为止最快的皮秒电脉冲诱导的晶化和非晶化相变。 这些工作发表在Science (2012)和 Scientific Report(2012)上。

　　提出了除晶态超晶格，非晶态超晶格外的第三种超晶格 - 晶态非晶态超晶格。该超晶格具有三个物理态，前两个对应于晶态和非晶态超晶格，而另一种则是两种基元分别处于晶态和非晶态。并运用光和电的方法实现了三个物理态之间的可逆相互转变。它对于半导体材料和器件开发提供了新的灵活有效的方法。该工作发表在Physics Review Letters (2008)上,并被新加坡科学院科学工程部评为2002-2008 技术顶尖十佳。将类超晶格应用在相变存储器上，成功地降低了工作电流，同时提高了速度。将类超晶格相变材料应用在光盘上成功地制成了多速可调可擦写光盘，该工作荣获新加坡2004年度国家科技奖。

　　2006年提出了人工认知存储器的新概念，推动存储器研究从密度驱动向功能驱动转变。发展具有仿生功能信息存储和处理相结合的新型信息存储技术。自2010年领导10年新加坡科学院人工认知存储器研究计划的第一期研究(3年)。受邀在惠普公司主编的忆阻器特刊上发表该技术的新概念和框架工作。2013年提出用神经形态处理器构建类脑计算系统的设想，从神经形态神经元、网络、器件、系统不同层面全面开展类脑计算研究。首次在忆阻器件上同时实现了STDP和SRDP(Spike Rate Dependent Plasticity,)突触学习规则和二者集成的突触学习规则。

　　将相变和自旋电子学结合，提出相变自旋电子学的概念，并首次发明了其所必需的相变磁性材料。该领域是同时利用材料的相变及电子的电荷和自旋来实现新的物理功能的新学科。这个工作发表在Advanced Materials 和Phys Rev B上，并被自然杂志亚洲材料网作为近期亚太地区亮点科技进展重点介绍。

　　提出相变存储器的物理极限和纳米相变的关系，改变了过去公认的物理极限只与光刻极限有关的认识，确立了纳米相变和尺度，形状，及相邻材料之间的关系。并推断其物理极限在5纳米左右。受邀在J.NanoSci&Tech介绍纳米相变的工作。该结果被New Science American上权威综述文章引用从而成为此领域的共识。

　　光是横波，发展纵波光束是一个重要的科学难题。提出了实现长焦深纯纵波光束的方案，并首次实现了纵波成分超过95%，聚焦传输距离超过四个波长的纵波光束，这将建立起新型的纵波光学的基础。该工作发表在Nature Photonics上。并提出利用纵波光束提高光盘密度到200GB的技术方案。

　　奖励与荣誉

　　重要奖项

　　1. 新加坡国家科技奖2004，National Technology Award 2004 for “New Superlattice-like Rewritable Phase Change Optical Media”, Singapore 2004 (年度唯一，排名：第一)。

　　2. Most Impressive Paper Award – 2012 European Phase Change and Ovonics Science Symposium (E\PCOS), “Ultra-fast Phase Change for Data Storage”

　　3. Outstanding Paper Award – 2012 Material Research Society (MRS) Spring Meeting, “A Strategy to Achieve Sub-nanosecond Write Speeds”

　　4. Best Poster Award - 2011 IEEE International Non-volatile Memory Technology Symposium (IEEE NVMTS), “Novel Bipolar TaOx-based RRAM”

　　5. Best Paper Award – 2006 E\PCOS “Superlattice-like PCRAM”

　　6. Best Paper Award - 2005 IEEE NVMTS, “Study of Geometry Effect of PCRAM”

　　所指导的学生获奖:

　　1. Tan Kah Kee Young Inventors’ Award 2011, Silver Award (vacancy in Gold Award) – Breaking the speed limitation of PCRAM

　　2. NUS FoE Innovation & Research Award 2011 – Investigation on reducing resistance drift for high density PCRAM

　　3. Best Paper Award 2011 in NUS IEEE Microelectronic Technologies & Devices - growth-dominant superlattice-like phase change medium and its application in lateral PCRAM

　　4. NUS FoE Innovation & Research Award 2010 – Diode switched crossbar architecture (1D1R) for ultra-high density PCRAM

　　5. NUS Outstanding Undergraduate Researcher Award 2009 – Multi-level PCRAM

　　6. NUS FoE Innovation & Research Award 2009, Highest Achievement Award – Multi-level PCRAM

　　7. Tan Kah Kee Young Inventors’ Award 2008, Silver Award (vacancy in Gold Award) –High performance GST/N-GST SLL PCRAM

　　8. Micron Asia Innovation Challenge Award 2008

　　9. NUS FoE Innovation & Research Award 2008 – Development of PCRAM devices for improved lifetime performance

　　10.IEEE Region 10 Undergraduate Student Paper Contest 2007, Second Prize – Material engineering of PCRAM

　　11.Micron Asia Innovation Challenge Award 2007

　　12.APRU Enterprise Business Plan Competition Extra Chapter Challenge 2006, Third Prize

　　13.IEEE Region 10 Undergraduate Student Paper Contest 2005, Third Prize - Investigation of PCRAM using material engineering to reduce programming current

　　14.NUS FoE Innovation Award 2005 - Thermal analysis and structural design and phase change random access memory

　　15.15. NUS FoE Innovation & Research Award 2007 – Investigation of the physical limitation of PCRAM

　　学术成果

　　近期精选文章目录

　　1. W. He, K. Huang, N. Ning, Ramanathan, G. Li, R. Zhao and L.P. Shi*, W. He, K. Huang, N. Ning, Ramanathan, G. Li, R. Zhao and L. P. Shi*, “Enabling an Integrated Rate “Enabling an Integrated Rate -temporal Learning Scheme on Memristor”,Scientific Reports, vol.4,pp.4755 ，2014.

　　2. G. Li*, N. Ning, K. Ramanathan, H. Wei, L. Pan, and L.P. Shi, “Behind the Magical Numbers: Hierarchical Chunking and the Human Working Memory Capacity”, International Journal of Neural Systems, vol. 24, pp. 1350019, 2013.

　　3. D. Loke, T. H. Lee, W. J. Wang, L. P. Shi*, R. Zhao, Y. C. Yeo, T. C. Chong, and S. R. Elliott*,

　　“Breaking the Speed Limits of Phase-Change Memory”, Science，336, 1566 (2012) .

　　4. W.J. Wang, Desmond Loke, L.P. Shi*,Rong Zhao, Hongxin Yang, Lung-Tat Ng, Kian-Guan Lim, Yeo-Chia Yeo, Tow-Chong Chong, and Andrea L. Lacaita, “Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials” Scientific Reports (by Nature Publication Group), 254019, (2012).

　　5. R. Zhao, L.P. Shi*, C.C. Tan, H.X. Yang, L.T. Law, and T.C. Chong – “Configuration effects of superlattice-like phase change material structure”, Physica Status Solidi B - applications and materials science (2012), 249, 10, 1925 (2012) (Invited Paper, special issue dedicated to Stan Ovshinsky's 90-year anniversary)

　　6. J.Q.Huang, L.P.Shi, E.G.Yeo, K.J. Yi, R. Zhao; “Electrochemical Metallization Resistive Memory Devices Using as a Solid Electrolyte” IEEE ELECTRON DEVICE LETTERS Volume: 33 Issue: 1 Pages: 98-100 ( 2012).

　　7. D. Ding, K. Bai, W.D. Song, L.P.Shi*, R. Zhao, R. Ji, M. Sullivan and P. Wu， “Origin of Ferromagnetism and Design Principle in Phase-Change Magnetic Materials”, Phys Rev B, 84, 214416 (2011).

　　8. L.P. Shi*, K.J. Yi, K. Ramanathan, R. Zhao, N. Ning, D. Ding, and T. C. Chong, “Artificial Cognitive Memory – Changing from Density Driven to Functionality Driven”, Applied Phys A, 102 (4), 865 (2011). (Invited paper).

　　9. Desmond Loke, L.P. Shi*, W.J. Wang, R. Zhao, H.X. Yang, L.T. Ng, K.G. Lim, T.C. Chong and Y.C. Yeo, “Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures”, Nanotechnology, 22 254019 (2011). (Invited paper).

　　10. E. K. Chua, L.P. Shi*, M. H. Li, R. Zhao, T. C. Chong, T. E. Schlesinger, and J. A. Bain， “Band alignment between GeTe and SiO2/metals for characterization of junctions in nonvolatile resistance change elements” Appl. Phys. Lett. 98, 232104 (2011);

　　11. W.D.Song, L.P.Shi, and T.C. Chong, “Magnetic Properties and Phase Change Features in Fe-Doped Ge-Sb-Te” JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 11 Issue: 3, 2648 (2011).

　　12. Desmond Loke, L.P. Shi*, W.J. Wang, R. Zhao, Lung.T. Ng,K.G. Lim, H.X. Yang, T.C. Chong, and Y.C. Yeo “Superlatticelike dielectric as a thermal insulator for phase-change random access memory” Applied Physics Letters, 97, 243508(2010).

　　13. E. K. Chua, L. P. Shi*, R. Zhao, K. G. Lim, T. C. Chong, T. E. Schlesinger, and J. A. Bain, “Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications”, Applied Physics Letters, 97, 183506 (2010).

　　14. T.C. Chong, M.H. Hong, L.P. Shi, “Laser precision engineering: from icrofabrication to nanoprocessing”, Laser & Photonics Reviews, Vol 4#1, 123 (2010). (Invited review paper).

　　15. E.G. Yeo, L.P. Shi*, R. Zhao, K.G. Lim, T.C. Chong and I.Adesida - “Parasitic capacitance effect on programming performance of PCRAM devices”, Applied Physics Letters, 96, 043506 (2010)

　　16. E.G. Yeo, R. Zhao, L.P. Shi*, K.G. Lim, T.C. Chong and I. Adesida. - “Transient phase change effect during the crystallization process in phase change memory devices”, Applied Physics Letters, 94, 243504, (2009)

　　17. H.X. Yang, T.C. Chong, R. Zhao, H.K. Lee, J.M. Li, K.G. Lim, and L.P. Shi*. - “GeTe/Sb7Te3 superlatticelike structure for lateral phase change memory”, Applied Physics Letters, 94, 203110, (2009)

　　18. Kiruthika Ramanathan, L.P. Shi, Jianming Li, Kian Guan Lim, Ming Hui Li, Zhi Ping Ang, Tow Chong Chong “A Neural Network Model for a Hierarchical Spatio-temporal Memory”; ADVANCES IN NEURO-INFORMATION PROCESSING, Volume: 5506; p428-435 (2009).

　　19. W.D. Song, L.P. Shi*, X. S. Miao, and T. C. Chong - “Synthesis and Characteristics of Phase Change Magnetic Material”, Advanced Materials, Vol. 20, No. 12, pp.2394-2397 (2008)

　　20. T. C. Chong, L. P. Shi*, X. Q. Wei, R. Zhao, H. K. Lee, A. Y. Du and P. Yang - “Crystalline Amorphous Superlattice”, Physical Review Letters, 100, 136101 (2008).

　　21. H. F. Wang, L. P. Shi, B. S. Luk’yanchuk, C. Sheppard, and T. C. Chong, “Creation of a needle of longitudinally polarized light in vacuum using binary optics”, Nature Photonics, Vol. 2, No. 8, pp. 501-505, (2008).

　　22. W. J. Wang, L. P. Shi*, R. Zhao, K. G. Lim, H. K. Lee, T. C. Chong, and Y. H. Wu. - “Fast phase transitions induced by picosecond electrical pulses on phase change memory cells”, Applied Physics Letters, Vol. 93, pp. 043121, (2008)

　　23. M. L. Lee, X. S. Miao, L. H. Ting, L. P. Shi*, "Ultra-fast crystallization and thermal stability of In-Ge doped eutectic Sb70Te30 phase change material", J. Appl. Phys vol. 103 Issue 4, 043501 (2008)

　　24. W.D. Song, L. P. Shi*, X. S. Miao and T. C. Chong - “Phase change behaviors of Sn-doped Ge-Sb-Te material”, Applied Physics Letters, Vol. 90, 091904, (2007).

　　25. L.P. Shi* and T.C. Chong - “Nano phase change for data storage application”, Journal of Nanoscience and Nanotechnology Vol.7, No.1, 65 (2007) (invited review paper)

　　近年特邀报告

　　1.“Phase Change Materials for Bio-Inspired Computing “MRS, 2014,US.

　　2.“The New Memory Technology to Support Brain-Like Computer” ICBM, 2014.

　　3.“Ultra low power of artificial cognitive memory for brain-like computation” INEC 2014, Japan.

　　4.“Endurance improvement of PCRAM”, Material Research Society (MRS) Spring Meeting 2013, USA

　　5.“Ultra-fast phase change for data storage”, E\PCOS 2012, Finland (Most Impressive Paper)

　　6.“High density, high speed and high endurance PCRAM”, 12th IEEE NVMTS 2012, Singapore

　　7.“The Challenges and Solutions for the Development of Artificial Cognitive Memory”, E\PCOS 2012, Finland

　　8.“A Strategy to Achieve Sub-nanosecond Write Speeds: Ab initio Molecular-dynamics Simulations of Nucleation in GST”, MRS Spring 2012, USA (Outstanding Paper)

　　9.“Recent progress of Artificial cognitive memory” IEEE Non-volatile Memory Technology Symposium (NVMTS) 2011, Nov 2011 (Shanghai, China).

　　10.“Material Selection through Band-alignment Study for PCRAM Integration”, European Symposium on Phase Change and Ovonic Science (E*PCOS) 2011, September 2011 (Switzerland )

　　11.“Ultrafast phase change memory”, Material Research Society (MRS) meeting spring 2011, April 2011 (USA).

　　12. “Nano-phase change for data storage and beyond” ISOM 2011, July 2011 (USA).

　　13.“Manipulation of Phase Change Materials with Artificial Structures” E*PCOS 2010, September 2010 (Italy).

　　14.“The status, challenges and future directions of data storage technology”, SEMICON West, (2010) (Singapore) (Keynote speech)

　　15.“Artificial Cognitive Memory – From Density Driving to Function Driving”, E*PCOS 2010, September 2010 (Italy)

　　16.“Material and structure engineering of high density PCRAM”, New Non-Volatile Memory workshop, November 2009 (Taiwan).

　　17.“Phase change magnetic materials for spintronics application”, IEEE Non-volatile Memory Technology Symposium (NVMTS) 2009, October 2009 (USA).

　　18.“Materials for PCRAM”, SRC/NSF/A*STAR Forum on 2020 semiconductor Memory Strategies: Processes, Devices, and Architectures, October 2009 (Singapore)

　　19.“Micro and Nano patterning on phase change materials”, International Conference on Materials for Advanced Technologies 2009, July 2009 (Singapore).

　　20.“Phase Change Magnetic Materials”, E*PCOS 2009, September 2009 (Germany).

　　21.“Fundamental Solutions to Achieve Ultra-High Density Optical Recording” ISOM 2009 tuition (2009).

　　22.“Phase Change Materials and Applications”, RIKEN-ASTAR Workshop, May 2009 (Singapore).

　　23.“Phase Change Material with Artificial Structures and Its Applications on Phase Change Memory”, IEEE NVMTS 2008, November 2008 (USA).

　　24.“Artificial Cognitive Memory – the Future Memory”, A*STAR Scientific Conference, November 2008 (Singapore).

　　25.“Phase change random access memory at 45 nm and beyond”, Pacific Rim Meeting on Electrochemical @ Solid-State Science (PRIME 2008), October 2008, Hawaii (USA).

　　26.“Investigation on PCRAM at the Extreme Condition in Dimensional and Time Domains” MRS spring 2008, April 2008 (USA).

　　27.“Chalcogenide based phase change materials and applications in data storage”, 3rd S-MRS Spring 2008, February 2008 (Singapore).

　　28.“Nano- and ultra-fast phase change”, 2008 E*PCOS, September 2008 (Czech Republic).

　　29. “The Status, Challenges and Future Trends of Optical Storage”, China Tech Forum, August, 2007, Wei Hai (China).

　　30.“Superlattice-like Structure Phase Change Materials and Its Application on Data Storage”, 2007 E*PCOS, August 2007 (Switzerland).

　　31.“Investigation on high density and high speed PCRAM”, IEEE International NVM Technology Symposium 2007, November 2007 (USA).

　　32.“The role of Ge switch in phase transition – an approach using atomically controlled GeTe/Sb2Te3 superlattice”, 2007 ISOM, October 2007 (Singapore).

　　33.“Engineering Phase Change Materials by Superlattice-like Structure and Its Applications”, International Super-RENS and Plasmon Sience & Technology Symposium (ISPS) 2007, February 2007 (Japan).

　　34.“Nano phase change for data storage application”, Journal of Nanoscience and Nanotechnology, 7, 1, 65 (2007) (invited review paper).

　　35.“Peculiarities of light scattering by nanoparticles and nanowires near plasmon resonance frequencies in weakly dissipating materials”, 1st European Topical Meeting on Nanophotonics and Metamaterials, 2007, (Austria) (Invited Lecture)

　　36.“Scattering of light by weakly dissipated plasmonic nanostructures”, Third International Conference on Surface Plasmon Photonics (SPP3), 2007 (France)

文章来源：清华大学精密仪器系